Date of Completion
4-7-2016
Embargo Period
4-7-2016
Keywords
Carbon Nanotube/Copper-composite, Through Silicon Via, Multiscale Modeling, Molecular Dynamics, Finite Element Analysis, Microfabrication
Major Advisor
Leila Ladani
Associate Advisor
Chengyu Cao
Associate Advisor
George Lykotrafitis
Associate Advisor
Jafar Razmi
Associate Advisor
Steven Suib
Field of Study
Mechanical Engineering
Degree
Doctor of Philosophy
Open Access
Open Access
Abstract
Miniaturization of interconnects is inevitable for the next-generation microelectronic devices. Copper (Cu), the state-of-the-art filling material for interconnects, prohibits further miniaturization due to the low ampacity--current carrying capacity--and the high resistance at these scales. Copper would not withstand the high current densities at further miniaturized scales and Cu atoms electromigrates in turn. Carbon Nanotube/Cu-composites exhibit higher ampacity than Cu by two orders of magnitude and the same conductivity of Cu. Therefore, they are proposed in this study to replace Cu in Through Silicon Vias (TSVs). Due to the novelty of CNT/Cu-composite, information about their mechanical properties is scarce. Thus, a multiscale modeling approach is conducted to preliminary understand their behavior under different load scenarios. Also, a systematic fabrication technique is investigated.
Recommended Citation
Awad, Ibrahim E., "Mechanical Integrity and Fabrication of Carbon Nanotube/Copper-based Through Silicon Via" (2016). Doctoral Dissertations. 1030.
https://digitalcommons.lib.uconn.edu/dissertations/1030