Novel II-VI quantum dot based electrical and photonic devices theory and experiment

Date of Completion

January 2006


Engineering, Electronics and Electrical




We have grown for the first time 3-8 nm CdSe and pseudomorophic Zn xCd(1-x)Se/ZnyCd(1-y)Se cladded quantum dots (QDs) (x > y) in a novel in-house built Photo assisted Microwave Plasma Metalorganic Vapor Phase Epitaxy (PMP-MOCVD) reactor. Characterization of the grown quantum dots has been carried out using Transmission Electron Microscopy, Atomic Force Microscopy, Energy Dispersive X-ray, photoluminance, and X-ray diffraction techniques. We have developed a technique in which the cladding thickness and dot diameter can be estimated from photoluminance and X-ray diffraction techniques. The simulation of the optical gain/absorption of these cladded quantum dots has also been study with a modification of how strain affects the system. ^