Investigation of the dual channel double heterostructure optoelectronic switch (DDOES)

Date of Completion

January 2004


Engineering, Electronics and Electrical




A new optoelectronic thyristor structure is investigated for use in optical interconnections. The thyristor structure is comprised of two modulation doped heterostructures, each with an associated quantum well. The thyristor has the properties of a detector in the off state and a laser in the on state. In addition, this is the first device where both n- and p-type transistors can be fabricated from the same growth structure. Charge, field, and voltage equations are developed to establish the equilibrium parameters as boundary conditions for device modeling. Current equations are developed and combined with charge and voltage equations to completely describe the two terminal IV relation. A mathematically precise definition is used to describe both the switching and holding points on the thyristor IV curve. Quantum well density, voltage, and current parameters at switching are calculated for both three terminal electrical injection and optical input. The holding point is also analyzed for three terminal operation, where charge is removed from each of the channels. The operation of the device as a photoreceiver is described, and its potential for high speed, low power dissipation, and sensitivity is quantified. The validity of the model and the structure is confirmed by comparison to the measured IV characteristics of fabricated two and three terminal devices. ^